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Reference: SSD7CS900-240-PB A
Brand: PNY
Locatie dispozitivInternFactor forma2.5"Capacitate de stocare240 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyTriple-Level CellAccesorii incluseScur
Reference: MZ-V9P4T0BW 3
Brand: SAMSUNG
SSD Samsung, 990 PRO, 4TB, M2, PCIe 4.0 , NVMe
Reference: WDS100T1B0E A
Brand: Western Digital
Locatie dispozitivPlug-in ModuleFactor formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 4.0 x4Tehnologia pentru memorieNAND FlashAccesorii incluseDocumentațieCuloare externăNegruMaximum Sequential Read Rate3600 MB/sMaximum Sequential
Reference: ZA500CM1A002 3
Brand: Seagate
SSD Seagate, BarraCuda, 500GB, 2.5", SATA III, R/W Speed: pana la 560/540MB/s
Reference: WDS480G2G0B A
Brand: Western Digital
Locatie dispozitivInternFactor formaM.2 (2280)Capacitate de stocare480 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCertificariFCC, UL, TUV, KC, BSMI, VCCIFlash Memory Cell TechnologyMulti-Level CellMaximum Sequentia
Reference: BL.9BWWA.104 3
Brand: ACER
SSD Acer, 960Gb, SA100, SATA 3.0, 7mm, rata transfer r/w 560mbs/507mbs, dimensiuni: 100.0mm x 69.9mm x 7.0mm
Reference: ASX8200PNP-512GT-C 3
Brand: ADATA
SSD Adata XPG SX8200 Pro, 512GB, NVMe, M.2
Reference: SSDSC2KW128G8X1 3
Brand: INTEL
SSD Intel, 128GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/440 mb/s, 2.5", Memory Type: 3D TLC.
Reference: WDS200T1XHE A
Brand: Western Digital
Locatie dispozitivPlug-in ModuleFactor formaM.2Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 4.0 x4Tehnologia pentru memorie3D NANDAccesorii incluseDocumentațieSSD Cooling MethodHeatsinkMaximum Random Read Rate1000000 IOPSMaximum Random Write Ra
Reference: WDS100T2G0A A
Brand: Western Digital
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologySingle-Level CellMaximum Sequen
